Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideyuki Sugiyama0
Tomoaki Inokuchi0
Yoshiaki Saito0
Date of Patent
January 19, 2010
Patent Application Number
12132664
Date Filed
June 4, 2008
Patent Primary Examiner
Patent abstract
A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.