Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 26, 2010
Patent Application Number
11683106
Date Filed
March 7, 2007
Patent Primary Examiner
Patent abstract
A method for crystallizing a semiconductor thin film is provided. The method includes continuously irradiating an energy beam on a semiconductor thin film while scanning at a given speed. The energy beam is scanned in parallel lines while keeping pitches of not larger than an irradiation radius of the energy beam to grow band-shaped crystal grains in a direction different from a scanning direction of the energy beam.
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