Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Guee-Hwang Sim0
Date of Patent
January 26, 2010
0Patent Application Number
119511620
Date Filed
December 5, 2007
0Patent Primary Examiner
Patent abstract
A method of fabricating a semiconductor device includes providing a semiconductor substrate in which a gate insulating layer and a pad layer are formed in an active region. A first trench is formed in an isolation region of the substrate. A passivation film is formed to cover the pad layer and fill the first trench. A second trench is formed by patterning the pad layer and removing an exposed semiconductor substrate, the second trench being formed within the first trench. An ion implantation process is performed on the semiconductor substrate exposed through the second trench.
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