US Patent 7652290 Standby current erasion circuit of DRAM
Patent 7652290 was granted and assigned to Winbond Electronics on January, 2010 by the United States Patent and Trademark Office.
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Patent abstract
The present invention discloses a standby current erasion circuit applied in DRAM, which improves prior art word line driving circuit to have the word line voltage outputted in standby mode be equal to the bit line voltage, thereby the short DC standby current between the word line and bit line can be erased.
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Patent Inventor Names
Yu-Chang Lin0
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US Patent 07652290 Standby current erasion circuit of DRAM US Patent 7652290 Standby current erasion circuit of DRAM
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Patent Number
076522900
Patent Number
76522900
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Current Assignee
Patent Jurisdiction
Patent Number
076522900
Date of Patent
January 26, 2010
0Patent Application Number
102324600
Date Filed
August 30, 2002
0Official Website
Patent Primary Examiner
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US Patent 07652290 Standby current erasion circuit of DRAM
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07652290
Date of patent
January 26, 2010
Patent application number
10232460
Date Filed
August 30, 2002
Patent primary examiner
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