Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 26, 2010
Patent Application Number
12260124
Date Filed
October 29, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
In a data program/erase device of a nonvolatile memory cell, data are re-written by means of an FN tunnel current of an entire channel surface. In a buried n-well of a semiconductor substrate in a flash memory formation region, p wells are placed in the form isolated from each other. In each of the p wells, a capacitor portion, a capacitor portion for programming/erasing data and an MIS•FET for reading data are placed. In the capacitor portion for programming/erasing data, rewriting (programming and erasing) of data is performed by means of an FN tunnel current of an entire channel surface.
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