Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Angelo Pinto0
Scott Balster0
Jeffrey A. Babcock0
Alfred Haeusler0
Gregory E. Howard0
Date of Patent
February 2, 2010
0Patent Application Number
119286520
Date Filed
October 30, 2007
0Patent Primary Examiner
Patent abstract
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
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