Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 2, 2010
Patent Application Number
11638110
Date Filed
December 12, 2006
Patent Primary Examiner
Patent abstract
Disclosed is a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming a drift area in the semiconductor substrate by implanting a dopant using the gate electrode as a mask, forming a sidewall spacer at sides of the gate electrode, and forming a source/drain area in the semiconductor substrate by implanting a dopant using the gate electrode and the sidewall spacer as a mask.
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