Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 2, 2010
Patent Application Number
12127171
Date Filed
May 27, 2008
Patent Primary Examiner
Patent abstract
A method to control the poly-Si depletion effect in CMOS structures utilizing a gas phase doping process which is capable of providing a high concentration of dopant atoms at the gate dielectric/poly-Si interface is provided. The present invention also provides CMOS structure including, for example, nFETs and/or pFETs, that are fabricated utilizing the gas phase doping technique described herein.
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