Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yasuhiro Uemoto0
Tetsuzo Ueda0
Tomohiro Murata0
Tsuyoshi Tanaka0
Daisuke Ueda0
Hidetoshi Ishida0
Hiroaki Ueno0
Date of Patent
February 2, 2010
0Patent Application Number
118989580
Date Filed
September 18, 2007
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
