Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 2, 2010
Patent Application Number
11856217
Date Filed
September 17, 2007
Patent Primary Examiner
Patent abstract
A memory cell includes a magnetoresistive sensor that comprises layers that include a free layer. The magnetoresistive sensor conducts a read current representative of data stored in the memory cell during a read interval. A first write conductor carries a write current that writes data in the free layer. At least one of the layers comprises a multiferroic layer formed of multiferroic material.
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