Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jack A. Mandelman0
Louis Lu-Chen Hsu0
William R. Tonti0
Date of Patent
February 9, 2010
0Patent Application Number
112667400
Date Filed
November 3, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
In a first aspect, a first apparatus is provided. The first apparatus is an eFuse including (1) a semiconducting layer above an insulating oxide layer of a substrate; (2) a diode formed in the semiconducting layer; and (3) a silicide layer formed on the diode. Numerous other aspects are provided.
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