Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 9, 2010
Patent Application Number
11833019
Date Filed
August 2, 2007
Patent Primary Examiner
Patent abstract
A semiconductor device includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a recess channel that is formed on the inner surface of a recess region, which is formed on the semiconductor substrate between the source and drain regions, and in an epitaxial semiconductor film in which dopants are doped. The semiconductor device further includes a gate insulating film formed on the recess channel, and a gate electrode that fills the recess region and is formed on the gate insulating film.
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