US Patent 7660181 Method of making non-volatile memory cell with embedded antifuse

Patent 7660181 was granted and assigned to SanDisk on February, 2010 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

SanDisk

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7660181

Patent Inventor Names

Tanmay Kumar0

S. Brad Herner0

Date of Patent

February 9, 2010

Patent Application Number

11819595

Date Filed

June 28, 2007

Patent Primary Examiner

‌

Ly D Pham

Patent abstract

A method of making a nonvolatile memory device includes forming a first electrode, forming at least one nonvolatile memory cell comprising a first diode portion, a second diode portion and an antifuse separating the first diode portion from the second diode portion, and forming a second electrode over the at least one nonvolatile memory cell.

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