Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hajime Fujikura0
Date of Patent
February 16, 2010
0Patent Application Number
117170520
Date Filed
March 13, 2007
0Patent Primary Examiner
Patent abstract
A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride semiconductor light emitting element. A composition of the InGaN barrier included in the multiquantum well active layer is expressed by InxGa1-xN (0.04≦x≦0.1), and a total thickness of InGaN layers comprising an In composition ratio within a range of 0.04 to 0.1 in the light emitting element including the InGaN barrier layers is not greater than 60 nm.
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