US Patent 7664151 Nitride semiconductor laser diode
Patent 7664151 was granted and assigned to Panasonic on February, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active layer, each of the plurality of semiconductor layers being made of group III nitride. The semiconductor has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleaved facet, the cleaved facet forming a facet mirror.
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US Patent 07664151 Nitride semiconductor laser diode US Patent 7664151 Nitride semiconductor laser diode
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Patent Number
0766415100
Patent Number
766415100
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076641510
Date of Patent
February 16, 2010
0Patent Application Number
119798770
Date Filed
November 9, 2007
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076641510
Date of Patent
February 16, 2010
0Patent Application Number
119798770
Date Filed
November 9, 2007
0Official Website
Patent Primary Examiner
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US Patent 07664151 Nitride semiconductor laser diode
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07664151
Date of patent
February 16, 2010
Patent application number
11979877
Date Filed
November 9, 2007
Patent primary examiner
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