US Patent 7667247 Method for passivating gate dielectric films

The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate, forming a dielectric layer over the semiconductor substrate, treating the dielectric layer with a carbon containing group, forming a conductive layer over the treated dielectric layer, and patterning and etching the dielectric layer and conductive layer to form a gate structure. The carbon containing group includes an OCH3 or CN species.