US Patent 7670929 Method for direct bonding two semiconductor substrates

The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.