Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ho Sang Yoon0
Date of Patent
March 9, 2010
0Patent Application Number
116318580
Date Filed
July 8, 2005
0Patent Primary Examiner
Patent abstract
Provided is a method of fabricating a nitride semiconductor light-emitting device comprising; providing a nitride semiconductor light-emitting device with a GaN layer, bringing the nitride semiconductor light-emitting device into contact with hydrogen separation metal, vibrating the nitride semiconductor light-emitting device and the hydrogen separation metal, removing hydrogen from the GaN layer of the nitride semiconductor light-emitting device and separating the hydrogen separation metal from the nitride semiconductor light-emitting device.
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