Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seiji Otake0
Date of Patent
March 9, 2010
Patent Application Number
11738722
Date Filed
April 23, 2007
Patent Primary Examiner
Patent abstract
In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, an NPN transistor is formed. Around the NPN transistor, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the NPN transistor. By use of this structure, when negative ESD surge is applied to a pad for a base electrode, the PN junction region of the protection element breaks down. Accordingly, the NPN transistor can be protected.
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