US Patent 7678298 Tantalum carbide nitride materials by vapor deposition processes
Patent 7678298 was granted and assigned to Applied Materials on March, 2010 by the United States Patent and Trademark Office.
All edits
Embodiments of the invention generally provide compositions of tantalum carbide nitride materials. In one embodiment, a composition of a tantalum carbide nitride material is provided which includes the chemical formula of TaCxNy, wherein x is within a range from about 0.20 to about 0.50 and y is within a range from about 0.20 to about 0.55, an interstitial/elemental carbon atomic ratio of about 2 or greater, and a crystalline structure. In some examples, the composition provides that x is within a range from about 0.25 to about 0.40, preferably, from about 0.30 to about 0.40, and y is within a range from about 0.30 to about 0.50, preferably, from about 0.35 to about 0.50. The interstitial/elemental carbon atomic ratio may be about 3, about 4, or greater. The composition further may have a sheet resistance within a range from about 1×104 Ω/sq to about 1×106 Ω/sq.
US Patent 07678298 Tantalum carbide nitride materials by vapor deposition processes US Patent 7678298 Tantalum carbide nitride materials by vapor deposition processes
US Patent 07678298 Tantalum carbide nitride materials by vapor deposition processes
Find more entities like US Patent 7678298 Tantalum carbide nitride materials by vapor deposition processes
