Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 16, 2010
Patent Application Number
11359947
Date Filed
February 22, 2006
Patent Primary Examiner
Patent abstract
A method of manufacturing a thin film transistor matrix substrate is provided. The first photo-mask process is used to define a gate electrode and a signal electrode. The second photo-mask process is used to obtain different thickness of a PR layer in different regions for forming a channel, gate electrode through holes, signal electrode through holes and conductive pads. The third photo-mask process is used to define a source, a drain, an upper signal electrode, a pixel electrode, gate electrode pads and signal electrode pads.
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