Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Haizhou Yin0
Louis Lu-Chen Hsu0
Xinhui Wang0
Xu Ouyang0
Date of Patent
March 23, 2010
Patent Application Number
12359731
Date Filed
January 26, 2009
Patent Primary Examiner
Patent abstract
A process for making a MCSFET includes providing a first implant through a first side of an elongated stack, and then providing a second implant through a second side of the stack. The first implant has a dose different than the dose of the second implant, so that final dopant concentrations in the first and second sides differ and the transistor has two threshold voltages Vt1, Vt2.
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