Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tae Su Jang0
Date of Patent
March 23, 2010
0Patent Application Number
119672680
Date Filed
December 31, 2007
0Patent Primary Examiner
Patent abstract
A method of fabricating a semiconductor device includes forming an ion implanted region on a semiconductor substrate in a cell/core region. The semiconductor substrate is selectively etched to form a recess. The recess exposes a boundary of the ion implanted region. The ion implanted region exposed at the bottom of the recess is removed to form an under-cut space in the semiconductor substrate. An insulating film is formed to form a substrate having a silicon-on-insulator (SOI) structure in the cell/core region. The insulating film fills the under-cut space and the recess.
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