Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 23, 2010
Patent Application Number
11801498
Date Filed
May 10, 2007
Patent Primary Examiner
Patent abstract
A method of forming a metal wire in a semiconductor device is disclosed The method includes the steps of etching an insulating layer formed on a semiconductor substrate to form a dual damascene pattern, forming a barrier metal layer in the dual damascene pattern, forming a metal layer on the barrier metal layer, and filling the dual damascene pattern with a conductive material to form a metal wire.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
