Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kyeong-Sik Lee0
Joog-Guk Kim0
Date of Patent
March 23, 2010
Patent Application Number
12170261
Date Filed
July 9, 2008
Patent Primary Examiner
Patent abstract
A method of forming a semiconductor device that includes heating a wafer on which an Al—Cu sputtering thin film is formed before patterning the Al—Cu sputtering thin film. The heating is performed at a temperature no less than a solid solution temperature of copper or at a temperature between 300° C. and 600° C. The process temperature in heating the process wafer is not higher than the flow temperature of aluminum or is the temperature at which a reflow process can be performed.
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