Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Suguru Sassa0
Fumihiko Inoue0
Junpei Yamamoto0
Date of Patent
March 23, 2010
0Patent Application Number
121305370
Date Filed
May 30, 2008
0Patent Primary Examiner
Patent abstract
A method for manufacturing a semiconductor device includes the steps of: forming an etching layer (17) formed of silicon on a semiconductor substrate (10); forming a mask layer (20) with a pattern on the etching layer (17), which includes an intermediate layer (22) as a silicon oxide film and a top layer (24) as a polysilicon; and etching the etching layer (17) using the mask layer (20) as a mask, and eliminating the top layer (24).
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