Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 23, 2010
Patent Application Number
11359528
Date Filed
February 23, 2006
Patent Primary Examiner
Patent abstract
An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3):t1={λ0/(4×n1)}×α (1),t2={λ0/(4×n2)}×(2−α) (2), and0.5<α<0.9 (3)wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, λ0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.
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