Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Narsingh B. Singh0
David J. Knuteson0
David Kahler0
Michael E. Aumer0
Andre Berghmans0
Brian P. Wagner0
Darren Thomson0
Date of Patent
March 23, 2010
Patent Application Number
11474398
Date Filed
June 26, 2006
Patent Primary Examiner
Patent abstract
A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
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