Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 23, 2010
Patent Application Number
11841200
Date Filed
August 20, 2007
Patent Primary Examiner
Patent abstract
A semiconductor device is provided having an insulating layer structure with a low dielectric constant and excellent barrier properties against copper. This semiconductor device has a copper wiring layer and includes at least one layered structure having a copper wiring line, an amorphous carbon film with a density of 2.4 g/cm3 or more, a porous silicon oxide insulating material layer, an amorphous carbon film with a density of 2.4 g/cm3 or more and a copper wiring line in that order.
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