Patent attributes
An RF power amplifier includes first and second field effect transistors having a gate, a source, and a drain, having an output power rating of at least 200 watts, and operating with a drain-to-source voltage that is greater than 50 VDC. The transistors are configured as a push-pull amplifier. The amplifier further includes an RF signal input. A input transformer is connected to the RF signal input. The input transformer has respective balanced outputs connected to the gates of the transistors. A broadband output transformer has a first balanced input connected to the drain of one the transistors, and a second balanced input connected to the drain of the other transistor. The broadband output transformer has an input to output impedance ratio of 1:4.
