Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Maurizio Lenzi0
Ubaldo Mastromatteo0
Francesco Martini0
Date of Patent
March 30, 2010
0Patent Application Number
120152710
Date Filed
January 16, 2008
0Patent Primary Examiner
Patent abstract
A process for manufacturing an integrated device includes the steps of: providing a silicon substrate on which a silicon dioxide structure is arranged and forming a trench having first and second essentially vertical walls relative to the substrate in the structure by means of anisotropic-type etching. A concavity having a sloped wall relative to the substrate is formed by isotropic-type etching which removes the second wall so that the concavity is open to the trench and the sloped wall faces the first wall.
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