US Patent 7687341 Method for fabricating semiconductor device

A method for fabricating a semiconductor device includes forming at least one gate pattern over a substrate, forming a first insulation layer over the gate patterns and the substrate, etching the first insulation layer in a peripheral region to form at least one gate pattern spacer in the peripheral region, forming a second insulation layer over the substrate structure, etching the second insulation layer in a cell region to a given thickness, forming an insulation structure over the substrate structure, and etching the insulation structure, the etched first insulation layer and second insulation layer in the cell region to form a contact hole.