Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazunari Ishimaru0
Yasunori Okayama0
Hirohisa Kawasaki0
Kunihiro Kasai0
Date of Patent
March 30, 2010
0Patent Application Number
110888850
Date Filed
March 25, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device manufacturing method is disclosed. The method is to form a second semiconductor layer which has less susceptibility to adopting insulative characteristics than a first semiconductor layer on the first semiconductor layer. Then, grooves which expose portions of the second and first semiconductor layers are formed to extend from the upper surface of the second semiconductor layer into the first semiconductor layer. Next, portions of the first and second semiconductor layers which are exposed to the grooves are changed into an insulator form to fill the grooves with the insulator-form portions of the first semiconductor layer.
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