Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Agostino Pirovano0
Fabio Pellizzer0
Date of Patent
March 30, 2010
0Patent Application Number
109434090
Date Filed
September 17, 2004
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic dimension and a storage region in contact with the resistive element. The selection element includes a chalcogenic material embedded in a dielectric. The chalcogenic material and the storage region are part of a stack having a common etched edge.
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