US Patent 7687886 High on-state breakdown heterojunction bipolar transistor

Patent 7687886 was granted and assigned to Microlink devices, inc. on March, 2010 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Microlink devices, inc.

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7687886

Date of Patent

March 30, 2010

Patent Application Number

11153078

Date Filed

June 14, 2005

Patent Citations Received

‌

US Patent 11984423 Radio frequency transmission line with finish plating on conductive layer

Patent Primary Examiner

‌

Kiesha R Bryant

Patent abstract

A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The improvement in the on-state breakdown voltage is related to the suppression of high electric fields adjacent a junction of a collector layer and a sub-collector layer forming a collector region of the HBT.

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