Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Thomas Nirschl0
Date of Patent
April 6, 2010
Patent Application Number
11633210
Date Filed
December 4, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A memory includes a first multi-bit resistive memory cell and a single bit resistive memory cell. The single bit resistive memory cell is for storing a bit indicating whether data stored in the first multi-bit resistive memory cell is inverted.
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