Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Daisuke Imanishi0
Yoshiro Takiguchi0
Shigeki Miyazaki0
Kaori Naganuma0
Date of Patent
April 6, 2010
0Patent Application Number
120498840
Date Filed
March 17, 2008
0Patent Primary Examiner
Patent abstract
A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.
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