Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 6, 2010
Patent Application Number
11657672
Date Filed
January 25, 2007
Patent Primary Examiner
Patent abstract
A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
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