Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Gerhard Strobl0
Date of Patent
April 13, 2010
Patent Application Number
11596185
Date Filed
May 10, 2005
Patent Citations Received
Patent Primary Examiner
Patent abstract
The invention relates to a solar cell which comprises photoactive semiconductor layers extending between the front and the back contact, and an integrated protective diode (bypass diode), said protective diode having a polarity opposite to that of the solar cell and is provided at its front with a p-conducting semiconductor layer, and the protective diode is connected to the front contact. The aim of the invention is to provide a highly stable protective diode and to prevent a migration of metal atoms. For this purpose, a tunnel diode (38) extends on the p-conducting semiconductor layer (36) of the protective diode (32), said tunnel diode being connected to the front contact (14) via an n+ layer.
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