US Patent 7696584 Reduced leakage power devices by inversion layer surface passivation
Patent 7696584 was granted and assigned to Wolfspeed on April, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor device is disclosed that includes a contact and an adjacent film on the surface of an underlying doped semiconductor material. The film has sufficient fixed charge to create an inversion layer adjacent the surface of the doped semiconductor material that under depletion conditions at least balances the number of surface states at the doping concentration of the underlying semiconductor material.
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US Patent 07696584 Reduced leakage power devices by inversion layer surface passivation US Patent 7696584 Reduced leakage power devices by inversion layer surface passivation
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Patent Number
0769658400
Patent Number
769658400
Edits on 27 Apr, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076965840
Date of Patent
April 13, 2010
0Patent Application Number
114620160
Date Filed
August 2, 2006
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076965840
Date of Patent
April 13, 2010
0Patent Application Number
114620160
Date Filed
August 2, 2006
0Official Website
Patent Primary Examiner
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US Patent 07696584 Reduced leakage power devices by inversion layer surface passivation
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07696584
Date of patent
April 13, 2010
Patent application number
11462016
Date Filed
August 2, 2006
Patent primary examiner
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