US Patent 7699050 Method of manufacturing (110) silicon wafer
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Patent abstract
The present invention provides a method for slicing a silicon single crystal ingot having a plane direction (110) by a wire saw to manufacture a (110) silicon wafer, wherein slicing is performed in such a manner that each angle formed between a traveling direction of a wire in the wire saw and a [−112 ] direction and a [1-12] direction in the (110) silicon single crystal ingot or a direction crystallographically equivalent to the directions exceeds 30°. As a result, the method for manufacturing the (110) silicon wafer that can suppress occurrence of breaking at the time of slicing and improve a production yield ratio can be provided.
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US Patent 07699050 Method of manufacturing (110) silicon wafer US Patent 7699050 Method of manufacturing (110) silicon wafer
Infobox
Patent Number
0769905000
Patent Number
769905000
Edits on 29 Mar, 2023
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Infobox
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Patent Jurisdiction
Patent Number
076990500
Date of Patent
April 20, 2010
0Patent Application Number
119924730
Date Filed
September 4, 2006
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
076990500
Date of Patent
April 20, 2010
0Patent Application Number
119924730
Date Filed
September 4, 2006
0Official Website
Patent Primary Examiner
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US Patent 07699050 Method of manufacturing (110) silicon wafer
Infobox
Is a
Patent jurisdiction
Patent number
07699050
Date of patent
April 20, 2010
Patent application number
11992473
Date Filed
September 4, 2006
Patent primary examiner
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