US Patent 7700468 Semiconductor device and method of fabricating the same

Provided are a semiconductor device and a method of fabricating the semiconductor device. In the method, a field oxide layer can be formed in a semiconductor substrate so as to define and active electrode including a gate oxide layer and a gate poly is formed in the active region. An etch groove is formed between the gate electrode and the field oxide layer. Dopant ions are implanted between the gate electrode and the field oxide layer so as to form a source/drain region.