US Patent 7700996 Tunable antifuse elements
Patent 7700996 was granted and assigned to Freescale Semiconductor on April, 2010 by the United States Patent and Trademark Office.
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A tunable antifuse element (102, 202, 204, 504, 952) includes a substrate material (101) having an active area (106) formed in a surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a dielectric layer (110) disposed between the gate electrode (104) and the active area (106). The dielectric layer (110) includes a tunable stepped structure (127). During operation, a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the dielectric layer (110) and a rupture of the dielectric layer (110) in a rupture region (130). The dielectric layer (110) is tunable by varying the stepped layer thicknesses and the geometry of the layer.
US Patent 07700996 Tunable antifuse elements US Patent 7700996 Tunable antifuse elements
US Patent 07700996 Tunable antifuse elements
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