US Patent 7706177 Method of programming cross-point diode memory array
Patent 7706177 was granted and assigned to SanDisk on April, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A method of programming a nonvolatile memory array including a plurality of nonvolatile memory cells, a plurality of bit lines, and a plurality of word lines, wherein each memory cell comprises a diode, or a diode and a resistivity switching element is disclosed. The method includes both bias programming the memory cells of the device.
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Patent Inventor Names
Christopher J. Petti0
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US Patent 07706177 Method of programming cross-point diode memory array US Patent 7706177 Method of programming cross-point diode memory array
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Patent Number
07706177
Patent Number
7706177
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Official Website
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US Patent 07706177 Method of programming cross-point diode memory array
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Is a
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Patent jurisdiction
Patent number
07706177
Date of patent
April 27, 2010
Patent application number
12003571
Date Filed
December 28, 2007
Patent primary examiner
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