Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Satoshi Taniguchi0
Hideki Ono0
Date of Patent
May 4, 2010
0Patent Application Number
118934580
Date Filed
August 16, 2007
0Patent Primary Examiner
Patent abstract
A method for producing a semiconductor device includes the steps of forming a predetermined device in a device layer grown on a semiconductor substrate with a sacrificial layer provided therebetween; and removing the sacrificial layer by etching to separate the semiconductor substrate from the device layer while a supporting substrate is bonded to the side of the device layer, wherein in the step of removing the sacrificial layer, a groove extending from the device layer to the sacrificial layer is formed before the sacrificial layer is removed, and the etching solution is allowed to penetrate to the sacrificial layer through the groove.
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