US Patent 7709395 Semiconductor device fabrication method

According to an aspect of the invention, there is provided a semiconductor device fabrication method including forming a first mask on a semiconductor substrate, processing the first mask to form a first mask pattern of a fine portion, forming a second mask on the semiconductor substrate on which the first mask pattern is formed, forming a second mask pattern on a predetermined portion of the second mask, forming a third mask pattern by anisotropically etching the second mask by using the second mask pattern, removing the second mask pattern and the first mask pattern, and processing the semiconductor substrate by using the third mask pattern.