US Patent 7709886 Thin film transistor and pixel structure
Patent 7709886 was granted and assigned to AU Optronics on May, 2010 by the United States Patent and Trademark Office.
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A fabricating method of a TFT includes first forming a source on a substrate. Then, a first insulation pattern layer is formed to cover parts of the source and the substrate. The first insulation pattern layer has an opening exposing a part of the source. Thereafter, a gate pattern layer is formed on the first insulation pattern layer. Then, the gate pattern layer and a second insulation pattern layer formed thereon surround the opening. Moreover, a second lateral protection wall is formed on an edge of the gate pattern layer in the opening. Afterwards, a channel layer is formed in the opening and covers the second lateral protection wall and the source. Then, a passivation layer with a contact window is formed on the channel layer and the second insulation pattern layer to expose a portion of the channel layer. Thereafter, a drain is formed on the exposed channel layer.
US Patent 07709886 Thin film transistor and pixel structure US Patent 7709886 Thin film transistor and pixel structure
US Patent 07709886 Thin film transistor and pixel structure
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