Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 4, 2010
Patent Application Number
11664096
Date Filed
September 29, 2005
Patent Primary Examiner
Patent abstract
A semiconductor substrate is formed with trenches, and each of the trenches includes: a gate electrode portion in which a gate electrode is arranged; and a gate lead portion which is brought into contact with an interconnect for electrically connecting the gate electrode to the outside. In the gate lead portion for electrically connecting the gate electrode to the outside, an end of each of the trenches has a greater width than a portion of the trench other than the end.
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