US Patent 7710482 Semiconductor device
Patent 7710482 was granted and assigned to Seiko Instruments on May, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A MOS image sensor IC has a silicon substrate, a MOS transistor and photodiodes disposed on the silicon substrate, and pixel regions each comprising one of the photodiodes. A protective film is disposed around the pixel regions. A first conductor for potential fixation is disposed under the protective film and surrounds the pixel regions. The first conductor is electrically fixed to a potential of the silicon substrate.
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Patent Inventor Names
Hiroaki Takasu0
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US Patent 07710482 Semiconductor device US Patent 7710482 Semiconductor device
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Patent Number
07710482
Patent Number
7710482
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Official Website
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US Patent 07710482 Semiconductor device
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Is a
Current assignee
Patent jurisdiction
Patent number
07710482
Date of patent
May 4, 2010
Patent application number
11818292
Date Filed
June 14, 2007
Patent primary examiner
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