Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 11, 2010
Patent Application Number
12155991
Date Filed
June 12, 2008
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for growing a β-Ga2O3 single includes preparing a β-Ga2O3 seed crystal and growing the β-Ga2O3 single crystal from the β-Ga2O3 seed crystal in a predetermined direction.
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